▎ 摘　　要

NOVELTY - The device (40) has a first graphene nanoribbon layer (14) with several first graphene nanoribbons. A channel layer (33) is provided in which a second graphene nanoribbon layer (24) having multiple second graphene nanoribbons having narrower bandgap than the first graphene nanoribbon is laminated. A source electrode (36) is connected to the channel layer and a drain electrode (37) is connected to the channel layer. A gate electrode (39) is provided at a position facing the channel layer between the source electrode and the drain electrode. One of the source electrode and the drain electrode is connected to the second graphene nanoribbon layer. USE - Semiconductor device such as FET and MOSFET for information processor (claimed) such as quantum computer. ADVANTAGE - The drain current can be increased. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a manufacturing method for semiconductor device; and (2) an information processor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device during manufacturing. Graphene nanoribbon layer (14,24) Channel layer (33) Source electrode (36) Drain electrode (37) Gate electrode (39) Semiconductor device (40)