▎ 摘　　要

NOVELTY - The device has a source electrode formed by graphene material. A channel is provided between a source electrode and a drain electrode. A source control electrode is connected with the source electrode for controlling doping of graphene material, where graphene material is doped opposite to the channel. A gate is electrically insulated from the channel. The source control electrode is configured to control contact potential barrier between the source electrode and the channel within 0.2 electron volts, where the channel is p-type doped. USE - FET for electronic device (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing FET by an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a fet for electronic device.