• 专利标题:   Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.
  • 专利号:   CN102339735-A, CN102339735-B
  • 发明人:   CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   B82Y010/00, H01L021/04, H01L029/49, H01L029/51, H01L029/78
  • 专利详细信息:   CN102339735-A 01 Feb 2012 H01L-021/04 201217 Pages: 8 Chinese
  • 申请详细信息:   CN102339735-A CN10308804 12 Oct 2011
  • 优先权号:   CN10308804

▎ 摘  要

NOVELTY - The method involves preparing a single nanometer scale groove structure for placing a carbon nano-tube on a substrate and locating the carbon nano-tube in the groove structure. The carbon nano-tube is educed by conductive materials. Graphene is transferred to an upper part of the groove structure of the carbon nano-tube with respect to air between the carbon nano-tube and the graphene in the groove structure. The conductive materials deposited on two ends of the graphene are educed. The substrate is made of silicon oxide, quartz, gallium arsenide or plastic. USE - Method for manufacturing a graphene transistor. ADVANTAGE - The method combines the carbon nano-tubes with the graphene to realize novel transistor with carbon structure. DETAILED DESCRIPTION - The conductive materials are selected from a metal material, a high doped semiconductor material, a conductive plastic or a polymer material. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene transistor.