• 专利标题:   Manufacture of device for interacting with electromagnetic radiation, involves disposing unpattemed graphene layer on substrate, and patterning bi-layer through graphene layer and metal layer with design comprising superimposed trenches.
  • 专利号:   WO2022236380-A1
  • 发明人:   SQUIRES A, DU J, VAN DER LAAN T A
  • 专利权人:   COMMONWEALTH SCI IND RES ORG
  • 国际专利分类:   G02B005/00, H01L029/66, H01P007/06, H01P007/10, H01Q001/36, H01Q015/00, H01Q015/08, H03J001/00
  • 专利详细信息:   WO2022236380-A1 17 Nov 2022 H01P-007/06 202299 Pages: 58 English
  • 申请详细信息:   WO2022236380-A1 WOAU050458 13 May 2022
  • 优先权号:   AU901438

▎ 摘  要

NOVELTY - The method involves mounting (402) an unpatterned graphene layer on a substrate comprising an unpatterned metal layer to form an unpatterned graphene-metal bi-layer attached to a surface of the substrate. The bi-layer through the graphene layer and the metal layer are patterned (403) with a design comprising superimposed trenches. Each of the trenches extend through the graphene layer and the metal layer to provide interaction with electromagnetic radiation. The patterning is performed using a single mask defining the design to create the trenches through the graphene layer and the metal layer. The single mask is used for performing both of etching of the graphene layer and etching of the metal layer. USE - Method for manufacturing electromagnetic radiation interaction device (claimed). ADVANTAGE - The graphene comes into direct contact with the dielectric layer, which results in improved adhesion of the graphene to the chip. The device is effective, with tuneability or reconfigurability, and has a design that can be realized physically. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electromagnetic radiation interaction device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing electromagnetic radiation interaction device. 400Method for manufacturing electromagnetic radiation interaction device 401Step for mounting metal layer on a dielectric substrate 402Step for mounting graphene layer on the metal layer 403Step for patterning bi-layer through the graphene layer and the metal layer with a design comprising superimposed trenches