• 专利标题:   Graphene hot electron nano-diode for optical detection device and energy conversion device, has electronic amplification type graphene layer, semiconductor layer forming Schottky junction with pinned layer, and electrodes.
  • 专利号:   KR1598779-B1
  • 发明人:   LEE C, LEE H, LEE Y K, PARK J
  • 专利权人:   BASIC SCI INST, KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, H01L031/04, H01L031/06
  • 专利详细信息:   KR1598779-B1 02 Mar 2016 201629 Pages: 13 English
  • 申请详细信息:   KR1598779-B1 KR142325 21 Oct 2014
  • 优先权号:   KR142325

▎ 摘  要

NOVELTY - A graphene hot electron nano-diode has electronic amplification type graphene layer, a semiconductor layer forming Schottky junction with the pinned layer, an electrode (A) forming an ohmic contact with the pinned layer, and another electrode (B) forming ohmic contact with semiconductor layer. USE - Graphene hot electron nano-diode for optical detection device and energy conversion device (all claimed). ADVANTAGE - The graphene hot electron nano-diode has excellent detection sensitivity and energy conversion efficiency.