• 专利标题:   Graphene film for composite complex contains several graphene domains each having specified area.
  • 专利号:   WO2011025045-A1, US2012196074-A1, JP2011528909-X, US8697230-B2, JP5641484-B2
  • 发明人:   AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K
  • 专利权人:   JAPAN SCI TECHNOLOGY AGENCY, UNIV KYUSHU, UNIV KYUSHU
  • 国际专利分类:   C01B031/04, B32B015/04, B32B009/00, B82Y030/00, B82Y040/00, C01B031/00, C23C016/26, C01B031/02
  • 专利详细信息:   WO2011025045-A1 03 Mar 2011 C01B-031/04 201119 Pages: 88 Japanese
  • 申请详细信息:   WO2011025045-A1 WOJP064848 31 Aug 2010
  • 优先权号:   JP200982, JP045930

▎ 摘  要

NOVELTY - A graphene film contains several graphene domains. The area of each domain is 0.000001 mu m2 to 100000 mm2. The orientation of 6-membered ring in the domain is aligned in a single direction on the whole graphene film. USE - Graphene film is used for composite complex (claimed) for electronics. ADVANTAGE - The graphene film has high homogeneity and uniform crystal orientation, and low domain boundary. The graphene film can be manufactured economically. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) composite complex, which is obtained by transferring graphene film on a substrate. The graphene thin film has size of 10 nm to 1 m2; and (2) manufacture of graphene film, which involves forming epitaxial metal film on a monocrystal substrate, contacting carbon raw material on the surface of epitaxial metal film, and growing graphene film.