▎ 摘　　要

NOVELTY - The method involves fixing a supply silicon dioxide substrate with a mask plate. Physical vapor deposition process is performed. The silicon dioxide substrate is formed with a copper thin film. The silicon dioxide substrate is fixed by a gold electrode. Graphite material is coated on an electrode device. Removed copper substrate cleaning process is performed by using ammonium sulfate solution. Silicon dioxide substrate surface is polished. Surface impurity removing process is performed. USE - Transferring CVD graphene device preparing method for a carbon-based integrated circuit manufacturing field. ADVANTAGE - The method enables preparing CVD graphene in a simple, convenient and reliable manner, avoiding spin coating PMMA, reducing injury of graphene device and reducing electrode contact resistance effect. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a transferring CVD graphene device preparing method. '(Drawing includes non-English language text)'