• 专利标题:   Bandwidth tuning infrared polarization converter, has substrate provided with silicon dioxide isolation layer that is fixed with top surface of single graphene layer, where included angle is formed between isolation layer and graphene layer.
  • 专利号:   CN105929477-A, CN105929477-B
  • 发明人:   GUO J, JIANG Y, LIU Z, LUO Y, YANG C
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G02B005/30
  • 专利详细信息:   CN105929477-A 07 Sep 2016 G02B-005/30 201669 Pages: 9 Chinese
  • 申请详细信息:   CN105929477-A CN10410055 08 Jun 2016
  • 优先权号:   CN10410055

▎ 摘  要

NOVELTY - The converter has a substrate provided with a silicon dioxide isolation layer. The silicon dioxide isolation layer is fixed with a top surface of a single graphene layer. The single graphene layer is formed in a rectangular hole. Length and width of the rectangular hole is 100-140nm and 80-120nm. Angle is formed between an edge of the substrate and the rectangular hole. Included angle is formed between the silicon dioxide isolation layer and the single graphene layer. USE - Bandwidth tuning infrared polarization converter. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a bandwidth tuning infrared polarization converter. '(Drawing includes non-English language text)'