▎ 摘　　要

NOVELTY - The transistor (10) has a composite gate dielectric layer (25) passivated with fluorine above a graphene layer (20), where the composite gate dielectric layer comprises a silicon dioxide layer directly on the graphene layer, and a hafnium oxide layer on the silicon dioxide layer. A metal gate (30) is located above the composite gate dielectric layer, where the silicon dioxide layer is about 1-2 nm thick and a substrate layer supports the graphene layer. A source and a drain are arranged on the substrate layer. USE - Metal oxide semiconductor field effect transistor (MOSFET). ADVANTAGE - The performance of the graphene based MOSFET is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a metal oxide semiconductor field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a MOSFET. MOSFET (10) Substrate (15) Graphene layer (20) Composite gate dielectric layer (25) Metal gate (30)