▎ 摘　　要

NOVELTY - A perovskite photovoltaic cell comprises a graphene electrode doped with a p-type impurity formed by applying an impurity solution to a surface of a graphene transferred onto a substrate, a hole-transport layer, a barrier layer formed of a metal oxide, an electron-transport layer, and an upper electrode formed on the electron-transport layer. The ratio of the direct current conductivity and optical conductivity of the graphene doped with the p-type impurity is 35-38.7. The diffusion distance (Ln) of the graphene electrode doped with the p-type impurity is 260-360 nm. USE - Perovskite photovoltaic cell. ADVANTAGE - The perovskite photovoltaic cell has high energy conversion efficiency. DETAILED DESCRIPTION - A perovskite photovoltaic cell comprises a graphene electrode doped with a p-type impurity formed by applying an impurity solution to a surface of a graphene transferred onto a substrate, a hole-transport layer on which the p-type impurity is deposited on the graphene electrode, a barrier layer formed of a metal oxide with predetermined thickness by applying a perovskite material on the hole-transport layer, an electron-transport layer formed on the barrier layer and an upper electrode formed on the electron-transport layer. The graphene electrode doped with the p-type impurity is formed by spin-coating p-type impurity solution on the graphene transferred on the substrate. The ratio of the direct current conductivity and optical conductivity of the graphene electrode doped with the p-type impurity is increased based on doping concentration of the p-type impurity solution. The ratio of the direct current conductivity and optical conductivity of the graphene doped with the p-type impurity is 35-38.7. The transmittance (T) of the graphene electrode doped with the p-type impurity is calculated using relation: T=(1+(Z0/2Rs))(( sigma )op/( sigma )DC)-2, where (( sigma )DC) is direct current conductivity, Rs is sheet resistance, (( sigma )op) is optical conductivity, and Z0 is free space impedance. The diffusion distance of the graphene electrode doped with the p-type impurity is increased based on the doping concentration of the p-type impurity solution. The diffusion distance (Ln) of the graphene electrode with doped the p-type impurity is 260-360 nm, calculated using relation: Ln=(Dnx Z1)0.5, where Dn is diffusion coefficient and Z1 is carrier decay time. An INDEPENDENT CLAIM is included for manufacture of perovskite photovoltaic cell.