• 专利标题:   Van der Waals hetero-junction based photoelectric detector for use in e.g. optical communication field, has optical fiber end surface metal electrodes connected with graphene film at two ends of van der Waals heterojunction structure.
  • 专利号:   CN110459548-A
  • 发明人:   XU F, XIONG Y, CHEN J
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   H01L027/146
  • 专利详细信息:   CN110459548-A 15 Nov 2019 H01L-027/146 201991 Pages: 8 Chinese
  • 申请详细信息:   CN110459548-A CN10431706 08 May 2018
  • 优先权号:   CN10431706

▎ 摘  要

NOVELTY - The detector has optical fiber side wall metal electrodes that are connected with optical fiber end surface metal electrodes. A van der Waals heterojunction structure is positioned at an end surface of an optical fiber and sequentially provided with a tungsten disulfide film, a molybdenum disulfide film and a graphene film from bottom to top. The optical fiber end surface metal electrodes are connected with the graphene film at two ends of the van der Waals heterojunction structure. The optical fiber side wall metal electrodes and the optical fiber end surface metal electrodes are symmetrically distributed with respect to axis of the optical fiber. USE - Van der Waals hetero-junction based photoelectric detector for use in an optical communication field and an optical sensing field. ADVANTAGE - The detector realizes weak light detection function of visible near infrared wave band and strong light detection function of full wave band, and has better stability, better anti-interference capability and wide application prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a Van der Waals hetero-junction based photoelectric detector preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a Van der Waals hetero-junction based photoelectric detector.