▎ 摘　　要

NOVELTY - The device has first transistor (TR21) connected to second transistor (TR11). The second transistor comprises first channel layer (C11) and first gate insulating layer (GI11). The first channel layer comprises graphene. The first gate insulating layer comprises first ion gel. The first transistor comprises second channel layer (C21) and second gate insulating layer (GI21). The second channel layer comprises the graphene. The second gate insulating layer comprises second ion gel, which is different from the first ion gel. USE - Semiconductor device. ADVANTAGE - The device includes ionic liquid with excellent chemical stability and a wide electrochemical window. The device allows arrangement/locations of positive ions with respect to the graphene to be inclined in direction in which positive charge density of an ion layer is reduced when a pyrrolidinium-based positive ion other than an imidazolium-based positive ion is utilized. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure for manufacturing a semiconductor device. Channel layers (C11, C21) Drain electrodes (D11, D21) Gate electrodes (G11, G21) Gate insulating layers (GI11, GI21) Transistors (TR11, TR21)