• 专利标题:   Silicon carbide-graphene composite nano forest film material useful as electrode material, useful for preparing super capacitor obtained by e.g. densely growing silicon carbide-graphene nanowhiskers on the surface of a substrate.
  • 专利号:   CN110648855-A
  • 发明人:   TU R, SUN Q, ZHANG S, ZHANG L
  • 专利权人:   UNIV WUHAN TECHNOLOGY
  • 国际专利分类:   C01B032/186, C01B032/956, H01G011/24, H01G011/30, H01G011/36, H01G011/86
  • 专利详细信息:   CN110648855-A 03 Jan 2020 H01G-011/24 202008 Pages: 13 Chinese
  • 申请详细信息:   CN110648855-A CN10917445 26 Sep 2019
  • 优先权号:   CN10917445

▎ 摘  要

NOVELTY - Silicon carbide-graphene composite nano forest film material, obtained by densely growing silicon carbide-graphene nanowhiskers on the surface of a substrate, is claimed. The silicon carbide/graphene nanowhiskers obtained by epitaxially growing graphene layers with 2-3 layers on the surface of silicon carbide whiskers. The silicon carbide/graphene nanowhiskers having a continuous pore structure between them, and forming a nano forest morphology of thin film materials. USE - The material is useful as electrode material and useful for preparing super capacitor (claimed). ADVANTAGE - The material: has high electrical conductivity, has large specific surface area, stable physical and chemical properties, greatly improve the double-layer capacitance of the cathode material; and shows good rate performance and cycle stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the preparation of silicon carbide-graphene composite nano forest film material comprising (1) lofting: placing the cleaned substrate into laser chemical vapor deposition chamber, adjusting the substrate position to make it located in the laser irradiation coverage area; (2) vacuumizing and introducing the gas pressure regulating: vacuumizing to below 10 Pa the laser chemical vapor deposition chamber, carrier flow argon into the diluted gas hydrogen gas and hexamethyldisilazane (HMDS) containing precursor; adjusting the deposition pressure and holding for 5 minutes; and (3) depositing: opening the laser heating process, using infrared thermal imaging device for real time monitoring the substrate surface temperature, heating to the deposition temperature for deposition, after finishing deposition precursor-firstly closes the HMDS gas and the current carrying argon, after 30 seconds orderly closing the hydrogen gas, laser, laser chemical vapor deposition chamber vacuumizing to below 10 Pa, cooling the substrate to the room temperature, and obtaining silicon carbide/graphene composite nano forest thin film material on the surface of the substrate.