▎ 摘　　要

NOVELTY - The spin element (1) has an insulating layer that is positioned between a first electrode layer (100) and a second electrode layer (400). A two-dimensional magnetic layer (200) is positioned between first electrode layer and insulating layer (300), or between the insulating layer and the second electrode layer and is capable of controlling doping. The first electrode layer, second electrode layer, and insulating layer are provided with a two-dimensional structure, and the planes of first electrode layer, second electrode layer, insulating layer and magnetic layer are parallel. The first electrode layer and second electrode layer are made of graphene. The insulating layer is made of hexagonal boron nitride. The magnetic layer is made of chromium iodide, chromium hexatellurium and selenomethionine. USE - Spin element used for spin device. ADVANTAGE - Since the magnetic anisotropy of the two-dimensional magnetic layer is reduced, the magnetization direction of the two-dimensional magnetic layer is easily controlled with little power. The magnetic anisotropy of the two-dimensional magnetic layer is reduced by using the hole-doped two-dimensional magnetic layer to facilitate control of the spin element. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the spin element. Spin element (1) Electrode layers (100,400) Two-dimensional magnetic layer (200) Insulating layer (300)