▎ 摘　　要

NOVELTY - Method for preparing germanium diselenide nanomaterials comprising realization of controllable preparation based on chemical vapor deposition strategy involves (a) using tape to tear the substrate out of the fresh surface, (b) placing the substrate treated in step (a) downstream of the high-temperature tube furnace, and placing the alumina boat containing germanium selenide powder outside the heating zone of the tube furnace in the order of air flow from upstream to downstream, (c) pouring argon gas into the quartz tube of the high-temperature tube furnace for cleaning, (d) increasing the temperature of the tube furnace, using a magnetic pull rod to push the germanium selenide powder to the heating center of the tube furnace, transporting the reaction precursor by the carrier gas to the low temperature zone and growing the germanium diselenide nanobelt on the placed substrate, and (e) lowering the temperature to room temperature, and turning off the argon gas to obtain the product. USE - The method is used for preparing germanium diselenide nanomaterials. ADVANTAGE - The method realizes controls the growth of germanium diselenide nanomaterials, quickly pushes the high-purity germanium selenide powder to the heating center, has adjustable morphology, size and thickness in the low temperature zone, and realizes industrialized production of germanium diselenide nanostructures. DETAILED DESCRIPTION - Method for preparing germanium diselenide nanomaterials comprising realization of controllable preparation based on chemical vapor deposition strategy involves (a) using tape to tear the substrate out of the fresh surface, (b) placing the substrate treated in step (a) downstream of the high-temperature tube furnace, and placing the alumina boat containing germanium selenide powder outside the heating zone of the tube furnace in the order of air flow from upstream to downstream, (c) pouring argon gas into the quartz tube of the high-temperature tube furnace for cleaning, (d) increasing the temperature of the tube furnace, and waiting until the temperature of the heating center of the tube furnace reaches 550-650 degrees C, using a magnetic pull rod to push the germanium selenide powder to the heating center of the tube furnace, transporting the reaction precursor by the carrier gas to the low temperature zone and growing the germanium diselenide nanobelt or film on the placed substrate, and (e) after completing the growth, lowering the temperature to room temperature, and turning off the argon gas to obtain the product.