▎ 摘　　要

NOVELTY - The application method involves immersing treated substrate in polymer solution to form a polymer layer on self-assembly silane layer, immersing treated substrate in alkaline GO solution to graft GO layer on polymer layer, and immersing treated substrate in solution of metal ion to intercalate the metal ions into the GO layer and form metal ion/GO abrasion. The treated substrate is immersed in a solution of reductant to reduce the metal ion into metal atom and GO layer into reduced GO (rGO) layer to form a metal atom/rGO composite layer (16) on substrate surface and hole surface. USE - Application method for coating layer of reduced graphene oxide on surface of holes in substrate of e.g. semiconductor, touch panel, or solar cell. ADVANTAGE - The replacement of barrier layer and seed layer of through silicon via (TSV) with graphene layer efficiently simplifies the TSV process and reduce its costs, and further achieves the purpose of producing the copper free conductive plug of TSV by nickel-tungsten alloy to resolve problems arising from the copper filling. DETAILED DESCRIPTION - The silane solution is a solution of 3-(2,3-epoxypropoxy)propyltrimethoxysilane (GPTMS). The polymer solution is a 3-10 wt.% solution of polyethyleneimine (PEI). The solution of reductant is a solution selected from the group consisting of HI solution, sodium borohydride solution, ascorbic acid solution, ethanol solution, and hydrazine solution. DESCRIPTION OF DRAWING(S) - The drawings show the graph of electron spectroscopy for chemical analysis (ESCA) spectrum of the substrate after grafting of silane and polymer PEI layers and schematic diagram of the copper filling process. Silicon substrate (10) Hole (11) Insulating layer (12) Copper (15) Metal atom/rGO composite layer (16)