• 专利标题:   Pressure sensor, has counter electrode formed with double-layer graphene, substrate fixed with double-layer graphene where thickness of double-layer Graphene is formed by using single-layer Carbon atom.
  • 专利号:   CN110686809-A
  • 发明人:   GAO L, XU J
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   G01L001/22, G01L009/06
  • 专利详细信息:   CN110686809-A 14 Jan 2020 G01L-001/22 202009 Pages: 9 Chinese
  • 申请详细信息:   CN110686809-A CN10957215 10 Oct 2019
  • 优先权号:   CN10957215

▎ 摘  要

NOVELTY - The sensor has a counter electrode formed with double-layer graphene. A substrate is fixed with the double-layer graphene. The substrate is provided with a stacking area. Thickness of the double-layer Graphene is formed by using single-layer Carbon atom. The double-layer Graphene is provided with a hexagonal lattice structure. The thickness of the double-layer Graphene is about 0.35 nanometer. The pressure sensor electrode is connected with a signal display module and a signal detection module. The double-layer Graphene is fixed with the signal detecting module and the signal display module by a wire. USE - Double-layer graphene interlayer based pressure sensor. ADVANTAGE - The sensor detects resistivity of a double-layer graphene interlayer and pressure measurement range for about of 0-1GPa. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a pressure sensor.