• 专利标题:   Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.
  • 专利号:   CN115707792-A
  • 发明人:   LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   C23C016/02, C23C016/40, C23C016/455
  • 专利详细信息:   CN115707792-A 21 Feb 2023 C23C-016/40 202320 Chinese
  • 申请详细信息:   CN115707792-A CN10950479 18 Aug 2021
  • 优先权号:   CN10950479

▎ 摘  要

NOVELTY - Depositing high-quality aluminum oxide thin films on the surface of graphene comprises cleaning the graphene substrate and adding into an atomic layer deposition chamber, passing water molecules into the atomic layer deposition chamber for pretreatment, passing aluminum precursors and oxygen precursors are through to carry out the atomic layer deposition process, obtaining required film thickness by controlling different cycle numbers after the deposition is completed, cooling temperature of the atomic layer deposition chamber to room temperature, and taking aluminum oxide thin film sample. USE - The method is useful for depositing high-quality aluminum oxide thin films on the surface of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flow diagram of the method for depositing high-quality aluminum oxide thin films on surface of graphene (Drawing includes non-English language text).