• 专利标题:   LCD thin-film transistor array substrate, has gate line, data line, thin-film transistor and pixel electrode that are orderly arranged on substrate, where pixel electrode is formed with graphene thin film.
  • 专利号:   CN102629035-A
  • 发明人:   YAO Q, ZHANG F, DAI T, XUE J
  • 专利权人:   BOE TECHNOLOGY GROUP CO LTD
  • 国际专利分类:   G02F001/1343, G02F001/1362, G02F001/1368, H01L021/77, H01L027/02
  • 专利详细信息:   CN102629035-A 08 Aug 2012 G02F-001/1343 201272 Pages: 16 Chinese
  • 申请详细信息:   CN102629035-A CN10294948 29 Sep 2011
  • 优先权号:   CN10294948

▎ 摘  要

NOVELTY - The substrate has a gate line, a data line, a thin-film transistor and a pixel electrode that are orderly placed on a substrate. The pixel electrode is formed with a graphene thin film i.e. single-layer or doped graphene thin film. Reducing agent is formed by mixing hydrazine hydrate, sodium tetrahydridoborate (NaBH4), lithium aluminum hydride (LiAlH4), vitamin-C and hydrogen materials. Carbon-containing material is formed as graphite or amorphous carbon material. An organic solvent is selected from one of teethhydrocarbon solvent, aromatic hydrocarbon solvent, ketone solvent or ether solvent. USE - LCD thin-film transistor array substrate. ADVANTAGE - The substrate reduces manufacturing cost, prevents environment from being influenced and ensures better health effect of a human body. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an LCD thin-film transistor array substrate manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating an LCD thin-film transistor array substrate manufacturing method.'(Drawing includes non-English language text)' Step for orderly arranging a source electrode, a drain electrode, a channel grid electrode, a gate insulating layer, a data line, a thin film transistor and a gate line on a substrate (I) Step for forming a graphene film on the substrate to form a passivation layer (II) Step for forming a patterned graphene thin film on the pixel electrode, the drain electrode and the thin film transistor (III)