▎ 摘　　要

NOVELTY - Epitaxially growing cold cathode field emitting material on silicon carbide substrate comprises performing hydrogen corrosion pre-treatment for silicon carbide (SiC) substrate to eliminate surface defect and damage layer until wafer surface achieves atom level flatness; placing SiC substrate in graphite crucible; increasing temperature at 1000-2000 degrees C; supplying hydrogen-argon mixing gas in furnace; controlling gas flow at 10-10000 standard cubic centimeter per minute (sccm); and controlling density and length-width ratio of vertically standing graphene strip. USE - Epitaxially growing cold cathode field emitting material, e.g. carbon film on silicon carbide substrate. ADVANTAGE - The method provides cold cathode material with thickness capable of achieving dozens of or hundred of micrometers. The carbon film is complete in structure and capable of being randomly moved or taken as paper. DETAILED DESCRIPTION - Epitaxially growing cold cathode field emitting material on silicon carbide substrate comprises performing hydrogen corrosion pre-treatment for silicon carbide (SiC) substrate to eliminate surface defect and damage layer until wafer surface achieves atom level flatness; placing SiC substrate in graphite crucible of high temperature furnace vacuum cavity; adjusting vacuum degree in vacuum cavity at higher than 1/1000 Pa; increasing temperature at 1000-2000 degrees C; supplying hydrogen-argon mixing gas in furnace; controlling gas flow at 10-10000 sccm; controlling work pressure between 1/1000 Pa and 10 Atm by pumping and discharging gas; controlling growth time and work pressure or controlling time or frequency of pumping and discharging gas to control length of nano strip; or controlling length-width ratio of nano strip and strip density by adjusting parameter; taking out epitaxial sample from high temperature furnace; heating to 300-1000 degrees C in annealing furnace; annealing for 0.5-200 hours; fast cooling; and separating carbon from SiC substrate to obtain cold cathode emitting material. An INDEPENDENT CLAIM is included for cold cathode material comprising substrate and cold cathode emitting film composed of graphene strips arranged in parallel and vertically grows on substrate.