▎ 摘　　要

NOVELTY - The method involves transferring a monolayer graphene film on top of a partial device. A layer of PMMA is spin-coated onto the monolayer graphene film. A mesa pattern is defined by using photolithography in the layer of photoresist. Renches are defined to deposit ferromagnetic contacts by electron beam deposition and lift-off. The monolayer graphene film is fluorinated. Fluorination is performed to fluorinate the device to form a homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene. USE - Method for making a homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene. ADVANTAGE - The method enables observing non-local hanle effect and a non-local spin valve to provide strong evidence to support spin injection, transport and detection in a graphene channel. The method allows true electron tunneling with lower impedance and loss in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a photograph of an optical image of a device with fluorination.