• 专利标题:   Directly preparing graphene on insulating substrate comprises e.g. providing an insulating substrate, forming germanium layer and grapheme layer on upper surface of insulating substrate from bottom to top, and removing germanium layer.
  • 专利号:   CN109055896-A
  • 发明人:   DI Z, ZHENG P, DONG L, XUE Z
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C23C014/18, C23C014/30, C23C014/35, C23C014/48, C23C014/58, C23C016/26, C23C028/00
  • 专利详细信息:   CN109055896-A 21 Dec 2018 C23C-014/18 201908 Pages: 9 Chinese
  • 申请详细信息:   CN109055896-A CN10804283 20 Jul 2018
  • 优先权号:   CN10804283

▎ 摘  要

NOVELTY - Directly preparing graphene on insulating substrate comprises (i) providing an insulating substrate, (ii) forming germanium layer and grapheme layer on the upper surface of the insulating substrate from bottom to top, and (iii) removing germanium layer by oxidation volatilization treatment and forming graphene layer on the insulating substrate. USE - The method is useful for directly preparing graphene on insulating substrate. DESCRIPTION OF DRAWING(S) - The drawing shows flow diagram of the directly preparation of graphene on insulating substrate (Drawing includes non-English language text).