• 专利标题:   Manufacture of non-catalytic graphene-grown substrate for electronic component, involves forming substrate, supplying gas containing carbon, performing inductively coupled plasma chemical vapor deposition and growing graphene.
  • 专利号:   KR2016003060-U
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016003060-U 06 Sep 2016 C01B-031/04 201674 Pages: 91
  • 申请详细信息:   KR2016003060-U KR005004 27 Aug 2016
  • 优先权号:   KR178163, KR005004

▎ 摘  要

NOVELTY - Manufacture of non-catalytic graphene-grown substrate involves forming a substrate free of catalyst layer at the surface, supplying a gas containing carbon, performing inductively coupled plasma chemical vapor deposition at low temperature, supplying etching gas, adsorbing hydrocarbon radicals, diffusing on the surface of nucleus by Van der Waals force, growing hetero-epitaxially, performing inductively coupled plasma chemical vapor deposition constantly and growing graphene. USE - Manufacture of non-catalytic graphene-grown substrate for manufacturing electronic component (all claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) non-catalytic graphene-grown substrate; and (2) manufacturing device of non-catalytic graphene-grown substrate.