▎ 摘　　要

NOVELTY - The cell (200) has a hybrid structure (260) comprising a silicon quantum dot layer (240), in which a silicon oxide layer (220) comprises silicon quantum dots (230). A doped graphene layer (250) is formed on the silicon quantum dot layer. An encapsulation layer (280) is formed on the doped graphene layer, and encapsulates the doped graphene layer. Electrodes (270, 270') are formed on upper and lower parts of the hybrid structure. The encapsulation layer is formed of grapheme. The hybrid structure comprises a metal nanowire layer formed on the graphene layer and formed of silver nanowires. USE - Solar cell. ADVANTAGE - The cell reduces an area, which is blocked by sunlight, thus increasing efficiency of the cell. The metal nanowire layer greatly increases electrical conductivity of the graphene layer or greatly decreases sheet resistance, such that flow of electrons or holes is facilitated, so that the electrons and the holes are recombined in each electrode, thus increasing energy conversion efficiency with increasing annealing temperature as contact characteristics between respective layers of the cell increase with increasing annealing temperature. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a solar cell with a graphene-silicon quantum dot hybrid structure. Solar cell (200) Silicon oxide layer (220) Silicon quantum dots (230) Silicon quantum dot layer (240) Doped graphene layer (250) Hybrid structure (260) Electrodes (270, 270') Encapsulation layer (280)