▎ 摘　　要

NOVELTY - The apparatus (100) has the first GNR layer (111) that is provided with the first GNRs which accumulate to surface inside. The second GNR layer (112) is provided with the second GNRs which accumulate to surface inside. The GNR layer and the second GNR layer are overlapped. The first work function of the first GNR layer and the second work function of the GNR layer are different. A laminated main portion (110) of the first GNR layer and the second GNR layer are provided with a charge-transfer complex. USE - Electronic apparatus for use as top-gate-type FET. ADVANTAGE - The electronic apparatus uses the characteristic of GNR. The polarity of the semiconductor is controlled by the presence or absence of the stacking of GNR layer, and the position of PN-junction is adjusted easily. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the electronic apparatus. (Drawing includes non-English language text) Electronic apparatus (100) Insulated substrate (101) Gate insulating film (103) Laminated main portion (110) GNR layers (111,112)