▎ 摘　　要

NOVELTY - The TFET has a bottom gate located at a bottom part of a gate oxide layer. A top gate located at a top part of the gate oxide layer. A channel is formed between the top gate and the bottom gate along length direction. The channel is formed with a channel section that is arranged along a direction from a source region to a drain region, where the channel section and the drain region are made of armchair-type graphene nano-strips. The strip is extended into the channel section corresponding to an inclined angle formed along extending direction of the armchair type graphene nano-strip. USE - Graphene strip heterojunction double gate TFET. ADVANTAGE - The TFET suppresses off-current under on-state condition, combines the channel section with a zigzag graphene strip along current transmission direction, avoids gap formation in the channel so as to promote quantum tunneling electrons in the source region, and increases on-state current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene strip heterojunction double gate TFET switching characteristic increasing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene strip heterojunction double gate TFET.