• 专利标题:   Graphene oxide slurry containing aromatic compound useful for preparing graphene thermal conductive film with high thermal conductivity, prepared by dispersing aromatic compound in graphene oxide dispersion liquid uniformly.
  • 专利号:   CN113213466-A
  • 发明人:   TANG R, WU Y, XU Y, KANG L, FANG G, QU Y
  • 专利权人:   SIXTH ELEMENT CHANGZHOU MATERIALS TECHNO
  • 国际专利分类:   C01B032/184, C01B032/198
  • 专利详细信息:   CN113213466-A 06 Aug 2021 C01B-032/198 202173 Pages: 18 Chinese
  • 申请详细信息:   CN113213466-A CN10068177 21 Jan 2020
  • 优先权号:   CN10068177

▎ 摘  要

NOVELTY - Graphene oxide slurry containing aromatic compound comprises an aromatic compound and graphene oxide slurry in a mass ratio of (1-10):100. USE - The slurry is useful for preparing graphene thermal conductive film with high thermal conductivity (claimed). ADVANTAGE - The graphene oxide film has compact sheet lapping and good bonding force. The prepared graphene thermal conducting film has improves thermal conducting performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) preparing the graphene oxide slurry containing aromatic compounds, comprising preparing a graphene oxide dispersion liquid, and dispersing the aromatic compound in the graphene oxide dispersion liquid until the aromatic compound is uniformly dispersed; (2) graphene oxide film, comprising graphene oxide and an aromatic compound filling the defects in the graphene oxide sheet layer; (3) preparing the graphene oxide film, comprising preparing the graphene oxide slurry containing aromatic compound, coating the graphene oxide slurry on the substrate, forming wet graphene oxide slurry film, drying and peeling the wet graphene oxide slurry film; (4) graphene thermal conductive film with high thermal conductivity, where the thermal conductivity of the graphene thermally conductive film is 1000-1900 W/m.K, the graphene thermal conductive film has a film thickness in the range of 12-25 mu m, and the thermal conductivity is 1600-1900 W/m.K, in the range of film thickness of 25-40 mu m, the thermal conductivity is 1400-1700 W/m.K, in the range of film thickness of 40-100 mu m, the thermal conductivity is 1000-1500 W/m.K, preferably, the density of the graphene thermally conductive film is 1.9-2.1 g/cm3, and the tensile strength of the graphene thermally conductive film is more than 20 MPa; and (5) preparing the graphene thermal conductive film with high thermal conductivity, comprising preparing a high-density graphene oxide film, reducing the high-density graphene oxide film to obtain a graphene foam, and pressing the graphene foam, preferably, the reduction method includes a thermal reduction method or a chemical reduction method, preferably a thermal reduction method, the method for reducing the graphene oxide film by the thermal reduction method includes subjecting the graphene oxide film to low-temperature treatment, medium-temperature treatment, and high-temperature treatment, where the temperature of the low-temperature treatment is 200-500 degrees C for 3-8 hours, preferably 6 hours, the temperature heating rate of the low-temperature treatment is 0.05-1 degrees C/minute, the gas environment of the low temperature treatment includes air, nitrogen or inert gas, preferably, the temperature of the medium temperature treatment is 1000-1500 degrees C for 2-6 hours, preferably 4 hours, the heating rate from low temperature to medium temperature is 1-5 degrees C/minute, the gas environment of the medium temperature treatment includes nitrogen or inert gas, the temperature of the high-temperature treatment is 2500-3000 degrees C for 1-3 hours, preferably 2 hours, the heating rate from medium temperature to high temperature is 5-10 degrees C/minute, the gas environment of the high-temperature treatment includes nitrogen or inert gas, the method for reducing the graphene oxide film by the chemical reduction method includes chemically reducing the graphene oxide film by immersion or fumigation to remove residual chemical reagents, preferably, the reducing agent for chemical reduction includes hydrazine hydrate, amine compounds, ascorbic acid, and hydrogen iodide, the method for removing residual chemical reagents includes water immersion, steam fumigation or heat treatment, preferably, the pressing pressure is 50-200 MPa, and the time is 2-24 hours.