• 专利标题:   Preparing graphene covering hollow glass microbead particles by reacting microbeads in furnace, introducing argon and hydrogen, initiating graphene growth process, introducing methane gas and growing graphene on microbead surface.
  • 专利号:   CN110423017-A
  • 发明人:   WANG Y, WANG H, PENG X, LI J, SHI Y
  • 专利权人:   ANHUI KAISHENG BASIC MATERIALS TECHNOLOG
  • 国际专利分类:   C01B032/186, C03C017/22
  • 专利详细信息:   CN110423017-A 08 Nov 2019 C03C-017/22 201989 Pages: 7 Chinese
  • 申请详细信息:   CN110423017-A CN10844386 06 Sep 2019
  • 优先权号:   CN10844386

▎ 摘  要

NOVELTY - Method for preparing graphene completely covering a light hollow glass microbead particles involves (a) reacting the microbeads in a reaction chamber of an open horizontal vacuum high temperature tube furnace, (b) pumping the vacuum in the chamber using a vacuum pump and stopping vacuuming, (c) introducing argon and hydrogen into the chamber for 10 minutes, stabilizing the gas flow, initiating graphene growth process by introducing methane into the chamber, (d) switching an open-type horizontal vacuum high-temperature tube furnace radio frequency power supply having a frequency of 13.56 MHz, obtaining a stable start-up methane plasma by adjusting the ignition power and growing graphene on the surface of the microbeads and (e) terminating methane gas and radio frequency power supply after the growth of graphene, introducing argon and hydrogen, cooling naturally, stopping argon and hydrogen after cooled to room temperature and obtaining the product. USE - The method is useful for preparing graphene completely covering light hollow glass microbead particles (claimed). ADVANTAGE - The method improves activated carbon on surface of micrbeads. DETAILED DESCRIPTION - Method for preparing graphene completely covering a light hollow glass microbead particles involves (a) reacting the microbeads in a reaction chamber of an open horizontal vacuum high temperature tube furnace at 500 degrees C, (b) pumping the vacuum in the chamber to less than 10 Pa using a vacuum pump and stopping vacuuming, (c) introducing 1000 sccm argon and 500 sccm hydrogen into the chamber for 10 minutes, stabilizing the gas flow, initiating graphene growth process by introducing methane into the chamber at a flow rate of 50 sccm and a partial pressure of 500 Pa, (d) switching an open-type horizontal vacuum high-temperature tube furnace radio frequency power supply having a frequency of 13.56 MHz, obtaining a stable start-up methane plasma by adjusting the ignition power and growing graphene on the surface of the microbeads for 30 minutes and (e) terminating methane gas and radio frequency power supply after the growth of graphene, introducing 300 sccm argon and hydrogen gases, cooling naturally, stopping argon and hydrogen gases after cooled to room temperature and obtaining the product.