▎ 摘　　要

NOVELTY - Preparing cerium-doped topological insulator bismuth telluride single crystal thin film involves using cerium source, bismuth source and tellurium source as evaporation source, degassing substrate, transferring substrate to molecular beam epitaxy chamber of the molecular beam epitaxy equipment, adjusting the substrate temperature, stabilizing, and growing the evaporation source and the substrate at the preset source temperature. USE - Method for preparing cerium-doped topological insulator bismuth telluride single crystal thin film. ADVANTAGE - The method has grows thin film with high doping concentration, the single crystal bulk material is doped with cerium element with the highest x=0.06 concentration, so the doping concentration nearly doubled.