▎ 摘　　要

NOVELTY - The method involves depositing a low refractive index material layer on an optical waveguide (2). A molybdenum disulfide thin film material layer is transferred on an upper surface of the optical waveguide. A sheet boron nitride thin film material layer and a black scale film material layer are mechanically transferred to an upper surface of the molybdenum disulfide thin film material layer. A metal material layer is deposited on two sides of a low-dimensional material heterojunction film (5) to form a positive electrode (6) and a negative electrode (7). The graphene resistance region forms a first graphene resistance heater (8) and a second graphene resistance heater (9). USE - Method for preparing low-dimensional material heterojunction photoelectric detector integrated with waveguide. ADVANTAGE - The photoelectric detector detects the high power and multi-band optical signal. The response degree of the photoelectric detector is high. The light-electric response bandwidth of the photoelectric detector is large. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photoelectric detector. (Drawing includes non-English language text) 2Optical waveguide 5Low-dimensional material heterojunction film 6Positive electrode 7Negative electrode 8First graphene resistance heater 9Second graphene resistance heater