• 专利标题:   Manufacture of carbon nanotube involves adding graphene quantum dots on silicon wafer, drying, placing in quartz furnace, injecting argon gas to purify chemical vapor deposition furnace, heating, carbon source is added, and cooled.
  • 专利号:   CN103332675-A, CN103332675-B
  • 发明人:   HU N, LIU Y, YANG Z, ZHANG Y, XU M
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   B82Y040/00, C01B031/02
  • 专利详细信息:   CN103332675-A 02 Oct 2013 C01B-031/02 201402 Pages: 6 Chinese
  • 申请详细信息:   CN103332675-A CN10280242 04 Jul 2013
  • 优先权号:   CN10280242

▎ 摘  要

NOVELTY - Graphene quantum dots is added dropwise on silicon wafer, dried, placed in quartz boat, quartz boat is placed in quartz tube furnace, valves at ends of quartz tube are closed, cooling water is circulated, vacuum pump is opened, argon gas is injected for purifying chemical vapor deposition furnace, heated, carbon source and hydrogen are added, pressure is adjusted, reacted, heating system, carbon source inlet and hydrogen inlet are closed, cooled, chemical vapor deposition furnace power supply is terminated, cooled to room temperature and removed, to obtain carbon nanotube. USE - Manufacture of carbon nanotube (claimed). ADVANTAGE - The method efficiently provides carbon nanotube by simple and economical process. DETAILED DESCRIPTION - Graphene quantum dots is added dropwise on silicon wafer, dried, placed in quartz boat, quartz boat containing silicon wafer is placed in quartz tube furnace, valves at ends of quartz tube are closed, cooling water is circulated, vacuum pump is opened, argon gas is injected, heated to 650-900 degrees C under argon atmosphere, chemical vapor deposition is performed, carbon source and hydrogen are added, pressure is adjusted, reacted, heating system, carbon source inlet and hydrogen inlet are closed, cooled to 300 degrees C or less, chemical vapor deposition furnace power supply is terminated, cooled to room temperature and removed, to obtain carbon nanotube.