• 专利标题:   Preparing microcrystalline graphene comprises e.g. adding microcrystalline graphite into mixed acid, stirring under ice bath, adding potassium permanganate into solution and then stirring.
  • 专利号:   CN107720739-A
  • 发明人:   LIN Q, LI L
  • 专利权人:   HUNAN GONSION GRAPHITE TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/19
  • 专利详细信息:   CN107720739-A 23 Feb 2018 C01B-032/19 201820 Pages: 8 Chinese
  • 申请详细信息:   CN107720739-A CN10915518 30 Sep 2017
  • 优先权号:   CN10915518

▎ 摘  要

NOVELTY - Preparing microcrystalline graphene comprises e.g. adding microcrystalline graphite into mixed acid, stirring under ice bath, where ratio between microcrystalline graphite and mixed acid is 1 g :25 ml, adding potassium permanganate into solution, stirring, where ratio between microcrystalline graphite and potassium permanganate is 1:4 g, placing solution under water bath at constant temperature, stirring, stabilizes solution temperature, diluting solution with deionized water, reacting, stirring solution, adding hydrogen peroxide until the solution is free of bubbles and gelled. USE - The method is useful for preparing microcrystalline graphene. DETAILED DESCRIPTION - Preparing microcrystalline graphene comprises (i) adding microcrystalline graphite into mixed acid, stirring under ice bath, where ratio between microcrystalline graphite and mixed acid is 1 g :25 ml, (ii) adding potassium permanganate into solution obtained in step (i) and stirring, where ratio between microcrystalline graphite and potassium permanganate is 1:4 g, (iii) placing solution obtained in step (ii) under water bath at constant temperature, stirring, stabilizes solution temperature, diluting solution for 3-5 times with deionized water, reacting at 80 degrees C, (iv) stirring solution obtained in step (iii), adding 5% hydrogen peroxide until the solution is free of bubbles and gelled, (v) filtering reaction product obtained in step (iv), washing cake with 5% hydrochloric acid and deionized water until the filtrate was neutral, (vi) drying filter cake at 60-80 degrees C for 48 hours to obtain oxidation microcrystalline graphene samples, and (vii) placing sample of oxidized microcrystalline graphene in argon atmosphere furnace, carrying out thermal reduction reaction at 200-1000 degrees C to obtain reduced microcrystalline graphene.