• 专利标题:   Preparation method of LED micro display, involves bonding prepared graphene thin layer as n-GaN surface of LED pixel structure of cathode electrode and display screen back plate is in low temperature to form ohmic contact.
  • 专利号:   CN106652820-A
  • 发明人:   FENG X, ZHOU Q, CHEN P, GAN T
  • 专利权人:   GOERTEK CO LTD
  • 国际专利分类:   G09F009/33, G09G003/32, H01L027/12, H01L027/15
  • 专利详细信息:   CN106652820-A 10 May 2017 G09F-009/33 201735 Pages: 10 Chinese
  • 申请详细信息:   CN106652820-A CN11239535 28 Dec 2016
  • 优先权号:   CN11239535

▎ 摘  要

NOVELTY - The method involves bonding prepared graphene thin layer (5) as n-GaN surface of LED pixel structure of cathode electrode and the display screen back plate (1) is in low temperature to form ohmic contact. The graphene thin layer and a metal connection structure (3) of control circuit is connected to display screen back low temperature bonding. USE - Preparation method of LED micro display. ADVANTAGE - The high temperature damage to the LED micro display is avoided. The extremely high transmittance is ensured in the visible light range. The better current conduction capability and thermal diffusion ability is enhanced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a LED micro display. DESCRIPTION OF DRAWING(S) - The drawing shows a structural view of the LED micro display. Display screen back plate (1) LED pixel structure (2) Metal connection structure (3) Copper substrate (4) Graphene thin layer (5)