▎ 摘　　要

NOVELTY - The device has two optical fiber end face metal electrodes (2) arranged on an end face of an optical fiber (1). A modulating material film (3) is located on an upper surface of the optical fiber end metal electrodes. A gate metal electrode (5) is covered on an oxide dielectric layer (4). An oxide medium layer is connected with the modulating material film. The gate metal electrodes are connected with each other. The optical fiber is provided with a first optical fiber and a second optical fiber that are connected together, where the modulating material film is made of graphene-10 layers. USE - Used as optical fiber modulating device based on field effect transistor. ADVANTAGE - The device can realize light modulation function from near infrared to mid-infrared band; and has good modulation effect, small size, and wide application prospect in the light modulation field. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the optical fiber modulating device based on field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the optical fiber modulating device based on field effect transistor. 1Optical fiber 2Optical fiber end face metal electrode 3Modulating material film 4Oxide dielectric layer 5Gate metal electrode