• 专利标题:   Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.
  • 专利号:   WO2023111562-A2, GB2613821-A
  • 发明人:   RIAZIMEHR S, KNOOPS H, SUNDARAM R
  • 专利权人:   OXFORD INSTR NANOTECHNOLOGY TOOLS LTD
  • 国际专利分类:   C23C016/02, C23C016/44, C23C016/448, C23C016/455, C23C016/505, C23C028/00, H01L021/02, C23C016/30, C23C016/32, C23C016/34, C23C016/36
  • 专利详细信息:   WO2023111562-A2 22 Jun 2023 C23C-016/02 202353 Pages: 30 English
  • 申请详细信息:   WO2023111562-A2 WOGB053231 14 Dec 2022
  • 优先权号:   GB018203

▎ 摘  要

NOVELTY - Plasma deposition of material onto two dimensional layer of first substrate (301), involves depositing a protective layer (302) directly onto a two dimensional layer by pulsed plasma deposition process, and depositing a second layer onto the protective layer by a second plasma deposition process. USE - Plasma deposition of material onto two dimensional layer of first substrate. ADVANTAGE - The method enables plasma deposition of material onto two dimensional layer with high quality, break down voltage and dielectric constant, and low physical and electronic defects and leakage current, and effectively reduces damage of the two-dimensional layer caused by reactive species. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a device for plasma deposition of material onto two-dimensional layer. 300Plasma generation apparatus 301Substrate 302Protective layer 303Layer provided on protective layer