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  • 专利标题:   Silicon stone graphene FET has source region and drain region of FET are located on graphene layer in channel area which is formed between source region and drain region.
  • 专利号:   CN202633318-U
  • 发明人:   CHEN Z, KUANG W, LIU X, TANG Z
  • 专利权人:   BEIJING ZHONGRUI JINGWEI TECHNOLOGY CO
  • 国际专利分类:   H01L029/16, H01L029/78
  • 专利详细信息:   CN202633318-U 26 Dec 2012 H01L-029/78 201326 Pages: 5 Chinese
  • 申请详细信息:   CN202633318-U CN20047511 14 Feb 2012
  • 优先权号:   CN20047511

▎ 摘　　要

NOVELTY - The silicon stone graphene FET has a gate electrode which is arranged from bottom to top of a low resistance silicon layer, a gate dielectric layer and a graphene layer. A source region and a drain region of the FET are located on a graphene layer in the channel area between the source region and the drain region. USE - Silicon stone graphene FET.