▎ 摘　　要

NOVELTY - A SiC-graphene surface composite with controlled surface morphology is obtained by subjecting SiC substrate, especially with a crystalline or polycrystalline structure, after initial preparation to (a) annealing at 1573-2090 K, at a pressure of less than or equal to 5x 107 mbar, in the first beam of silicon atoms from external source of silicon atoms, and (b) cooling at a rate of 0.23-1.43 K/s, in the second beam of silicon atoms from the external source of silicon atoms, to obtain a surface covered with low terraces, or cooled at a rate of greater than or equal to 100 K/s in the third beam of silicon atoms from the external source of silicon atoms, to obtain a surface covered with a network of pits. USE - Obtaining a SiC-graphene surface composite with controlled surface morphology for use in electronics or electrical energy storage. ADVANTAGE - The method produces graphene on the surface of the substrate, controls the morphology of the surface of the graphene layer, and uses standard techniques without the need for additional operations or special preparation, physical or chemical, of the surface of the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for SiC-graphene composite on SiC surface with crystalline or polycrystalline structure containing 1-4 atomic layers of graphene forming a honeycomb lattice, comprisinng a surface covered with terraces or network of pits, where the difference in the height of terraces ranges from 0.25x l0-9-2.5x l0-9 m or the surface density of the pits is greater than or equal to 5x l012/m2.