• 专利标题:   Method for preparing graphene involves growing graphene on insulating substrate or metal, and carrying out optical photo-etching on insulating substrate.
  • 专利号:   CN102751179-A, CN102751179-B
  • 发明人:   PENG L, WANG S, XU H, ZHANG Z, SHI R
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   B82Y010/00, G03F007/00, H01L021/04
  • 专利详细信息:   CN102751179-A 24 Oct 2012 H01L-021/04 201308 Pages: 8 Chinese
  • 申请详细信息:   CN102751179-A CN10212244 21 Jun 2012
  • 优先权号:   CN10212244

▎ 摘  要

NOVELTY - The method for preparing graphene involves growing graphene on insulating substrate or metal. Optical photo-etching is carried out on the insulating substrate, and the electrode material is deposited on the insulating substrate. The graphene is formed in the shape of active region, and dipping device using chlorobenzene is obtained. USE - Method for preparing graphene. ADVANTAGE - The processing efficiency can be improved, and excellent performance can be achieved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene manufacturing device. Graphene channel (1) Electrode (2)