▎ 摘　　要

NOVELTY - Preparing nitrogen-doped graphene film, comprises (i) mixing graphene oxide solution and the water-soluble amine cross-linking agent uniformly to obtain a mixture, where water-soluble amine cross-linking agent is ethylenediamine, propylenediamine, butanediamine, diethylenetriamine, triethylenediamine, ethylenetetramine, tetraethylenepentamine, ammonia, polyallylamine, hydroxylamine hydrochloride, hydrazine hydrate and/or p-phenylenediamine; (ii)coating the mixture to form a film, and drying at 20-95degrees Celsius to obtain an amine-based cross-linked graphene oxide film; and (iii) subjecting the amine-based cross-linked graphene oxide film to heat treatment under the protection of an inert gas to obtain a nitrogen-doped graphene film. USE - The graphene film is useful for energy storage, electrical device, catalysis and biological medicine. ADVANTAGE - The method is simple and convenient, does not contain inorganic salt ion, and provides nitrogen-doped graphene film with excellent thermal conductivity. The raw material source of the method is very wide, it can be widely used, and has low cost. The method uses graphene oxide solution as raw material, which can be solidified and assembled into amine cross-linked graphene oxide film by one step. The preparation method of the reaction temperature is low, simple operation, green and environment-friendly, and can realize large-scale continuous preparation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a nitrogen-doped graphene film.