▎ 摘　　要

NOVELTY - The component has a heavily-doped hexagonal silicon sheet (4) provided with a polymethylmethacrylate (PMMA) insulating layer (2). II-VI group nano-material (3) is formed as P-type or n-type doped II-VI group nanometer material and selected from one of zinc selenide (ZnSe), zinc sulfide (ZnS), zinc oxide (ZnO), cadmium sulfur (CdS) material. An electrode (1) is made of gold (Au), aluminum (Al), indium tin oxide (IT0), indium (In) or graphene material. The P-type doped II-VI group nanometer material is selected from one of gallium (Ga), indium and chlorine (Cl) material. USE - Large scale II-VI group overlapped integrated silicon base hetero-junction nano-photovoltaic component. ADVANTAGE - The component is simple and easy to use and inexpensive, and has stable performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a large scale II-VI group overlapped integrated silicon base hetero-junction nano-photovoltaic component preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a large scale II-VI group overlapped integrated silicon base hetero-junction nano-photovoltaic component. Electrode (1) PMMA insulating layer (2) II-VI group nano-material (3) Heavily-doped hexagonal silicon sheet (4)