• 专利标题:   Plasma processing apparatus used for changing property of material e.g. graphene, has electrode portions that are arranged to supply high voltage of constant cycle such that plasma discharge reaction is generated in processing channel.
  • 专利号:   KR2013095459-A, KR1374627-B1
  • 发明人:   KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L
  • 专利权人:   CHEORWON PLASMA RES INST
  • 国际专利分类:   B22F009/14, H05H001/24, H05H001/34
  • 专利详细信息:   KR2013095459-A 28 Aug 2013 H05H-001/24 201401 Pages: 17
  • 申请详细信息:   KR2013095459-A KR016904 20 Feb 2012
  • 优先权号:   KR016904

▎ 摘  要

NOVELTY - The apparatus has a receiving seat (60) transformed to specific electrical and physical properties according to plasma discharge generated with high voltage supplied via cross-sectional shape electrode portions (52,54) within the reactor (30). The electrode portions are arranged to supply the high voltage of the constant cycle such that the plasma discharge reaction is generated in the processing channel (56) in which the process gas is injected in the processing channel. The treatment substance of the processing object material is received through the outlet (44) of reactor. USE - Plasma processing apparatus used for changing property of specific material such as graphene, graphite of sheet-like structure, carbon nanotube, carbon compound, steel powder, aluminum powder, silicon, ceramics and polymeric material (all claimed) for electronic circuit integration device used during manufacture of transistor, resistor, wiring and memory device using plasma. Can also be used in nanosilver, gold nano, dendrimer, aluminum oxide, zinc oxide, titanium oxide, silicon oxide, cerium oxide, iron nano, polystyrene and nanoclay. ADVANTAGE - Since the various kinds of processing object material is flowed inside the reactor, the plasma discharge can be performed effectively. The exposure time about the plasma reaction of the processing object material passing through the reactor in process gas and exposure field can be increased. The certain electrical and the conversion of the physical properties of the plasma processing apparatus can be performed. The uniform effect, overall productivity and producing quality of the desired material can be improved. The supply quantity of the processing object material supplied within the reactor can be controlled. The shape and type of layout of the spirally extended electrode can be diversified. The extension type of the spiral path can be diversified based on the electrical property of the desired extent. The deformation of the various modulations for the conversion of the physical properties and apparatus of producer can be easily enabled. DESCRIPTION OF DRAWING(S) - The drawing shows the cutout perspective view of the plasma processing apparatus. Reactor (30) Outlet of reactor (44) Electrode portions (52,54) Processing channels (56,57) Receiving seat (60)