▎ 摘　　要

NOVELTY - The device has a standard van der Waals contact structure provided with a contact electrode. The standard van der Waals contact structure is provided with a graphene nanosheet and a metal i.e. chromium or palladium metal that is vertically stacked and evaporated on the graphene nanosheet. A lateral conduction channel is formed with molybdenum telluride nanometer sheet or two selenium tungsten nanosheets. A substrate is formed with the standard van der Waals contact structure, where the substrate is made of silicon dioxide/silicon or hexagonal boron nitride nanosheet. USE - Quasi-Van der Waals contact structure based two-dimensional semiconductor device. ADVANTAGE - The device forms a quasi-van der Waals contact structure with graphene/metal so as to obviously reduce Schottky barrier of a carrier device, exhibits heat-assisted field emission activation energy carriers so as to improve performance. The device improves verification performance, and increases manufacturing effectiveness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a quasi-Van der Waals contact structure based two-dimensional semiconductor device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a quasi-Van der Waals contact structure based two-dimensional semiconductor device. '(Drawing includes non-English language text)'