▎ 摘　　要

NOVELTY - The FET has a FET body formed with a bottom layer. A silicon base substrate layer is formed with an N- type or P-type high doped single crystal silicon layer. A silicon dioxide layer is formed with the silicon base substrate layer. A graphene layer is formed on the silicon dioxide layer. An electrode layer is formed with a source electrode and a drain electrode. The source electrode and the drain electrode are fixedly connected with a leading-out electric conduction line. A quantum point layer is formed with the graphene layer in a channel position. USE - Quantum point/graphene photosensitive FET. ADVANTAGE - The FET has high response degree of incident light infrared wave band. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a quantum point/graphene photosensitive FET preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a quantum point/graphene photosensitive FET.