▎ 摘　　要

NOVELTY - Germanium-doped long wave infrared terahertz detector array comprises an absorption region array and a common electrode two parts which are located on the front surface of the adjacent region of the wafer. The pixel electrode of the absorption area array is composed of a graphene layer (3) and a metal electrode layer (6). The common electrode comprises a barrier layer electrode (7), a front etching heavily doped electrode layer and a front back electrode metal layer (5). The back electrode passivation layer (8) is located on a surface of a barrier sheet electrode. The working mode of the detector is connecting the front and back of the metal layer and absorption layer to the reading circuit. USE - The array is useful in weather forecast, environment monitoring, missile guidance, night vision imaging and other fields. ADVANTAGE - The array solves the difficult problem of preparing the high-purity germanium-doped epitaxial layer of the step-type detector pixel through the absorption layer formed by the ion implantation technique, and is compatible with the current semiconductor process technology. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing germanium-doped long wave infrared terahertz detector array. DESCRIPTION OF DRAWING(S) - The drawing shows a structural diagram of a detector array. Chemical thinning polishing germanium-doped wafer (1) Absorption layer (2) Graphene layer (3) Front etching heavily doped electrode layer (4) Front back electrode metal layer (5) Absorbing layer metal electrode layer (6) Blocking layer electrode (7) Back electrode passivation layer (8)