▎ 摘　　要

NOVELTY - Processing gas assisted graphene hydrogen insertion layer growth comprises (i) selecting graphene sample and placing in a reaction chamber; (ii) adding graphite pedestal into the reaction chamber, replacing air with argon gas, vaccum-pumping and passing hydrogen into the reaction chamber; (iii) passing the carbon-containing gas into the reaction chamber, increasing the temperature, and pressure; (iv) maintaining temperature of reaction chamber, flow rate of the carbon-containing process gas, pressure of the reaction chamber and maintaining the hydrogen atmosphere annealing treatment; (v) maintaining the carbon-containing process gas flow rate and reaction chamber after the hydrogen atmosphere annealing; (vi) turning off the heating and the carbon-containing process gas; and (vii) exhausting the hydrogen, filling the reaction chamber with argon to replace the residual hydrogen gas, charging the reaction chamber pressure to atmospheric pressure and collecting the cavity. USE - The method is useful for processing gas assisted graphene hydrogen insertion layer growth. ADVANTAGE - The method improves the insertion layer of graphene hydrogen treatment temperature, increases the hydrogen insertion layer coverage and quality, has good repeatability, simple and easy process and good for high temperature furnace. DETAILED DESCRIPTION - Processing gas assisted graphene hydrogen insertion layer growth comprises (i) selecting a graphene sample on a silicon-plane silicon carbide substrate and placing it on a graphite substrate in a reaction chamber; (ii) adding the graphite pedestal into the reaction chamber, replacing the air with argon gas, vaccum-pumping the reaction chamber, then passing hydrogen into the reaction chamber, keeping the hydrogen flow rate to 60-120 l/minute, increasing the temperature to the set T1 temperature and the chamber pressure is set to P1 pressure; (iii) passing the carbon-containing gas into the reaction chamber after the reaction chamber temperature reaches the T1 temperature, where the flow ratio of the carbon-containing process gas and the hydrogen gas is 0.01-0.5%, gradually increasing the temperature to the T2 temperature, and gradually increasing the pressure in the reaction chamber to the P2 pressure; (iv) maintaining the temperature of the reaction chamber, the flow rate of the carbon-containing process gas, and the pressure of the reaction chamber and maintaining the hydrogen atmosphere annealing treatment for 10-120 minutes; (v) maintaining the carbon-containing process gas flow rate and the reaction chamber after the hydrogen atmosphere annealing, where the pressure is constant and gradually decreasing to the temperature T1; (vi) turning off the heating and the carbon-containing process gas, where the pressure in the reaction chamber is kept constant and the temperature is naturally lowered to room temperature; and (vii) exhausting the hydrogen in the reaction chamber, filling the reaction chamber with argon to replace the residual hydrogen gas, charging the reaction chamber pressure to atmospheric pressure with argon gas after multiple replacements and collecting the cavity.