• 专利标题:   Preparing graphene which is used for construction of devices e.g. integrated circuits, comprises bombarding a surface of a silicon carbide substrate with ions (of e.g. gold), and annealing a volume of the substrate at the bombarded surface.
  • 专利号:   WO2013028861-A1, WO2013028861-A8, US2015010714-A1
  • 发明人:   GILA B P, APPLETON B R, LEMAITRE M G, TONGAY S
  • 专利权人:   UNIV FLORIDA RES FOUND INC, UNIV FLORIDA RES FOUND INC
  • 国际专利分类:   B01J019/08, B82B001/00, B82B003/00, C01B031/02, C01B031/36, C01B031/04
  • 专利详细信息:   WO2013028861-A1 28 Feb 2013 C01B-031/02 201320 Pages: 19 English
  • 申请详细信息:   WO2013028861-A1 WOUS052061 23 Aug 2012
  • 优先权号:   US526510P, US14236789

▎ 摘  要

NOVELTY - Preparing graphene comprises: providing a silicon carbide substrate; bombarding a surface of the substrate with ions; and annealing a volume of the substrate at the bombarded surface, where at least one graphene layer forms at the bombarded surface. USE - The method is useful for preparing graphene (claimed) which is useful for construction of devices e.g. integrated circuits. ADVANTAGE - The method: avoids conventional lithography processes that leave residue on the substrates surface, which can lower the mobility of graphene and creates unintended doping effects on the graphene produced; avoids chemicals that create disorder in graphene; avoids the requirement of oxygen plasma etching to define the graphene devices, which can induce disorder at the graphene boundaries, or promote degradation of properties; and lowers the annealing temperature for graphene growth on silicon carbide, due to implantation or ion damage in the silicon carbide substrate.