▎ 摘　　要

NOVELTY - Preparing graphene comprises: providing a silicon carbide substrate; bombarding a surface of the substrate with ions; and annealing a volume of the substrate at the bombarded surface, where at least one graphene layer forms at the bombarded surface. USE - The method is useful for preparing graphene (claimed) which is useful for construction of devices e.g. integrated circuits. ADVANTAGE - The method: avoids conventional lithography processes that leave residue on the substrates surface, which can lower the mobility of graphene and creates unintended doping effects on the graphene produced; avoids chemicals that create disorder in graphene; avoids the requirement of oxygen plasma etching to define the graphene devices, which can induce disorder at the graphene boundaries, or promote degradation of properties; and lowers the annealing temperature for graphene growth on silicon carbide, due to implantation or ion damage in the silicon carbide substrate.