▎ 摘　　要

NOVELTY - Producing non-catalytic substrate growing graphene, comprises (a-i) providing a substrate, (a-ii) supplying carbon-containing gas, and performing electron cyclotron resonance microwave plasma enhanced chemical vapor deposition (ECR-CVD), and (a-iii) growing graphene on the substrate without provided with a catalyst layer in Van der Waals heteroepitaxial growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals. USE - The graphene is useful for producing electronic part of electronic device (all claimed). DETAILED DESCRIPTION - Producing non-catalytic substrate growing graphene, comprises either (a-i) providing a substrate, (a-ii) supplying carbon-containing gas, and performing electron cyclotron resonance microwave plasma enhanced chemical vapor deposition (ECR-CVD), and (a-iii) growing graphene on the substrate without provided with a catalyst layer in Van der Waals heteroepitaxial growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (b-i) providing a substrate, (b-ii) supplying carbon-containing gas, and performing ECR-CVD, and (b-iii) absorbing and diffusing hydrocarbon radicals, and growing graphene on the substrate without provided with a catalyst layer in Van der Waals growth type which generates as nuclei on surface of the substrate; (c-i) loading the substrate into a deposition chamber to form a substrate layer on the substrate, and (c-ii) loading the substrate into ECR-CVD chamber, and supplying carbon-containing gas into the chamber to produce non catalytic substrate grow graphene, where the substrate is sequentially loaded into the deposition chamber and ECR-CVD chamber by using a load-locked chamber; (d-i) loading the substrate into a deposition chamber to form substrate layer on the substrate, (d-ii) selectively etching the substrate layer by loading into an etching chamber, and (d-iii) loading the substrate into the ECR-CVD chamber, and supplying carbon-containing gas into the ECR-CVD chamber to produce non catalytic substrate grow graphene, where the substrate is sequentially loaded into the deposition chamber and ECR-CVD chamber by using a load-locked chamber; (e-i) loading the substrate into a deposition chamber to form substrate layer on the substrate, (e-ii) loading the substrate into a CMP chamber, and performing a CMP process to produce a substrate layer on the substrate, and (e-iii) loading the substrate into the ECR-CVD chamber, and supplying carbon-containing gas into the ECR-CVD chamber to produce non catalytic substrate grown graphene; (f-i) loading the substrate into a deposition chamber to form substrate layer on the substrate, (f-ii) loading the substrate into a CMP chamber, and performing a CMP process to produce a substrate layer on the substrate, (f-iii) selectively etching the substrate layer by loading the substrate into an etching chamber, and (f-iv) loading the substrate into the ECR-CVD chamber, and supplying carbon-containing gas into the ECR-CVD chamber to produce non catalytic substrate grown graphene; (g-i) forming a substrate layer on a substrate, (g-ii) providing uniform density distribution of gas containing carbon on the substrate layer, (g-iii) performing an ECR-CVD, and (g-iv) growing graphene on the substrate without provided with a catalyst layer in Van der Waals heteroepitaxial growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (h-i) forming a substrate layer on a substrate, (h-ii) increasing concentration of the carbon containing gas in particular area of the substrate layer, (h-iii) performing an ECR-CVD, (h-iv) generating graphene growth starting point on particular region of the substrate layer in Van der Waals heteroepitaxial growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals, (h-iv) growing graphene in parallel direction to particular region of the substrate layer, and (h-v) forming a large crystals of the graphene; (i-i) forming a substrate layer on a substrate, (i-ii) providing uniform density distribution of gas containing carbon on the substrate layer, (i-iii) performing an ECR-CVD, (i-iv) growing graphene on the substrate without provided with a catalyst layer in Van der Waals growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (j-i) forming a substrate layer on a substrate, (j-ii) increasing concentration of the carbon containing gas in particular area of the substrate layer, (j-iii) performing an ECR-CVD, (j-iv) growing graphene on the substrate without provided with a catalyst layer in Van der Waals growth type which generates nuclei on surface of the substrate, and adsorbing and diffusing hydrocarbon radicals, (j-v) growing graphene in parallel direction to particular region of the substrate layer, and (j-vi) forming a large crystals of the graphene; or growing graphene in parallel direction to particular region of the substrate layer, and linearly contacting the grown graphene surface. INDEPENDENT CLAIMS are also included for: (1) non catalytic graphene grown substrate direct contacting with the surface of the substrate and having crystal grain diameter in the first direction parallel or perpendicular to the surface greater than the crystal grain diameter in the different direction parallel or perpendicular to the surface and multiple crystal grain boundaries along the first and second directions, and single crystal surrounded by the crystal grain boundary; (2) non catalytic graphene grown substrate producing device comprising a gas supplying unit for supplying the carbon-containing gas, a gas ejecting unit for ejecting the carbon-containing gas supplied from the gas supplying unit, the substrate having the substrate layer arranged in contact with the carbon-containing gas ejected from the gas ejecting unit, a heating unit for heating specific region of the substrate, and an electron cyclotron resonance forming unit for forming electron cyclotron resonance within the chamber by applying microwave power, or an gas outlet, the substrate, the heating unit, and an outer part for accommodating the electron cyclotron resonance forming unit; (3) platform comprising the non catalytic graphene grown substrate producing device; and (4) gas injection part comprising a storage unit to accommodate the carbon-containing gas, a heater to heat the carbon-containing gas at constant temperature, a piezo injection system provided with an piezo electric actuator, and a solenoid injection system to eject carbon-containing gas.