• 专利标题:   Preparation of graphene in formation of graphene film on insulated substrate, involves providing oxidation mild atmosphere, and growing graphene in substrate in pressure-reduced atmosphere by vapor phase growth method.
  • 专利号:   JP2018027865-A
  • 发明人:   KANEKO S, KATO C, TANAKA S, OZAWA T, YASUHARA S
  • 专利权人:   KANAGAWA INST IND SCI TECHNOLOGY, JAPAN ADVANCED CHEM LTD
  • 国际专利分类:   B82B001/00, B82Y030/00, B82Y040/00, C01B032/15, C01B032/18, C01B032/182, H01B005/14
  • 专利详细信息:   JP2018027865-A 22 Feb 2018 C01B-032/15 201817 Pages: 8 Japanese
  • 申请详细信息:   JP2018027865-A JP160322 18 Aug 2016
  • 优先权号:   JP160322

▎ 摘  要

NOVELTY - Preparation of graphene (11) involves providing an oxidation mild atmosphere in which oxidation is gentle than an oxidation atmosphere whose entire pressure are oxygen, and growing graphene in a substrate in a pressure-reduced atmosphere by vapor phase growth method. USE - Preparation of graphene in formation of graphene film e.g. wire-like graphene film on insulated substrate (all claimed) in manufacture of semiconductor element. ADVANTAGE - The method enables efficient preparation of high-quality graphene by reliably growing graphene directly on the substrate by vapor phase growth method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the preparation of graphene. Substrate (7) Terrace portion (8) Ledge portion (9) Terrace edge portion (10) Graphene (11)