▎ 摘　　要

NOVELTY - Preparation of graphene (11) involves providing an oxidation mild atmosphere in which oxidation is gentle than an oxidation atmosphere whose entire pressure are oxygen, and growing graphene in a substrate in a pressure-reduced atmosphere by vapor phase growth method. USE - Preparation of graphene in formation of graphene film e.g. wire-like graphene film on insulated substrate (all claimed) in manufacture of semiconductor element. ADVANTAGE - The method enables efficient preparation of high-quality graphene by reliably growing graphene directly on the substrate by vapor phase growth method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the preparation of graphene. Substrate (7) Terrace portion (8) Ledge portion (9) Terrace edge portion (10) Graphene (11)