1. 平台首页
  2. 国际专利信息
  • 专利标题:   Manufacture of graphene substrate for semiconductor element, involves contacting metal layer and carbon-containing layer, heating to dissolve carbon in carbon-containing layer, and cooling to deposit carbon in metal layer.
  • 专利号:   WO2012086387-A1, US2013272951-A1, JP2012549708-X, US8980217-B2, JP5871213-B2
  • 发明人:   HIURA H, TSUKAGOSHI K
  • 专利权人:   NEC CORP, NAT INST MATERIALS SCI, NEC CORP, NEC CORP, NAT INST MATERIALS SCI
  • 国际专利分类:   C01B031/02, H01L029/786, H01L021/02, H01L021/336, H01L051/05, H01L051/30, H01L051/40, B82Y030/00, B82Y040/00, C01B031/04, H01L029/16, H01L029/66
  • 专利详细信息:   WO2012086387-A1 28 Jun 2012 C01B-031/02 201245 Pages: 52 Japanese
  • 申请详细信息:   WO2012086387-A1 WOJP077879 25 Nov 2011
  • 优先权号:   JP284021

▎ 摘　　要

NOVELTY - A metal layer (2) is contacted with carbon-containing layer (3), heated to dissolve the carbon (5) in carbon-containing layer in the metal layer, and then cooled to deposit the carbon in metal layer as graphene on surface of substrate (1), to obtain graphene substrate. USE - Manufacture of graphene substrate used for semiconductor element (all claimed) for electronics, optoelectronics and spintronics. ADVANTAGE - The graphene substrate is economically manufactured with excellent productivity, mechanical property and chemical property. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of manufacture of graphene substrate. Substrate (1) Metal layer (2) Carbon-containing layer (3) Carbon (5) Other element (6)