• 专利标题:   Preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material involves mixing graphene water-based slurry and binder, dispersing, coating slurry on three-dimensional porous current collector material, vacuum drying, co-sputtering with elemental silicon.
  • 专利号:   CN115207297-A
  • 发明人:   WANG J, CHANG K, WAN W, ZHOU H, LIU P
  • 专利权人:   SHANGHAI YULING NEW ENERGY TECHNOLOGY CO
  • 国际专利分类:   H01M010/0525, H01M010/42, H01M004/36, H01M004/38, H01M004/48, H01M004/66, H01M004/80
  • 专利详细信息:   CN115207297-A 18 Oct 2022 H01M-004/36 202201 Chinese
  • 申请详细信息:   CN115207297-A CN10392274 13 Apr 2021
  • 优先权号:   CN10392274

▎ 摘  要

NOVELTY - Preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material comprises (a) cleaning the three-dimensional porous current collector material, and vacuum drying, (b) adding graphene water-based slurry and binder according to the mass ratio of 85:15-95:5 and mixing, and dispersing the slurry at high speed, evenly coating the slurry on both sides of the three-dimensional porous current collector material, and vacuum drying to obtain three-dimensional porous current collector material containing the graphene coating, (c) co-sputtering elemental silicon and niobium-based oxides on the three-dimensional porous current collector material containing graphene coating by using magnetron sputtering at a set temperature. USE - The method is useful for preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material. ADVANTAGE - The cathode material has high specific capacity, excellent rate performance and cycle stability without introducing conductive agent, and good mechanical flexibility, continuous bending stability and strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material prepared by the above-mentioned method. DESCRIPTION OF DRAWING(S) - The drawing shows a flaow chart of a method for preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material (Drawing includes non-English language text).